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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB855 description collector current: i c = -2a low collector saturation voltage : v ce(sat) = -1.2v(max)@i c = -2a high collector power dissipation applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -4 v i c collector current-continuous -2 a p c total power dissipation @ t c =25 20 w t j junction temperature 150 t stg storage temperature range -45~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB855 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma ; r be = -50 v v (br)cbo collector-base breakdown voltage i c = -5ma ; i e = 0 -50 v v (br)ebo emitter-base breakdown voltage i e = -5ma; i c = 0 -4 v v ce (sat) collector-emitter saturation voltage i c = -2a; i b = -0.2a b -1.2 v v be (on) base-emitter on voltage i c = -1a; v ce = -4v -1.5 v i cbo collector cutoff current v cb = -20v; i e = 0 -100 a h fe-1 dc current gain i c = -1a; v ce = -4v 35 200 h fe-2 dc current gain i c = -0.1a; v ce = -4v 35 f t current-gain?bandwidth product i c = -0.5a; v ce = -4v 35 mhz ? h fe- 1 classifications a b c 35-70 60-120 100-200 isc website www.iscsemi.cn 2 |
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